Integrated barrier/plug fill schemes for high aspect ratio Gb DRAM contact metallizationCHEN, Y.-P; DIXIT, G. A; LU, J.-P et al.Thin solid films. 1998, Vol 320, Num 1, pp 73-76, issn 0040-6090Conference Paper

Integrated tungsten polycide : analysis of interface compositionADACHI, J. Y; MCINTOSH, B. C; BADT, D. E et al.Thin solid films. 1998, Vol 320, Num 1, pp 128-133, issn 0040-6090Conference Paper

On the microstructure of rapidly quenched Al-14 & 22 a/o Mn alloys = Sur la microstructure d'alliages Al-14 et 22%at. Mn trempés rapidementDIXIT, G. A; RAGHUNATHAN, V. S.Scripta metallurgica. 1986, Vol 20, Num 2, pp 195-199, issn 0036-9748Article

Exploring CMP solutions to planarity challenges with tungsten plugsMENDONCA, J; MURELLA, K; KIM, I et al.Thin solid films. 1998, Vol 320, Num 1, pp 103-109, issn 0040-6090Conference Paper

Improved TiN film as a diffusion barrier between copper and siliconRHA, S.-K; LEE, W.-J; LEE, S.-Y et al.Thin solid films. 1998, Vol 320, Num 1, pp 134-140, issn 0040-6090Conference Paper

The etching behavior of tungsten (W) with respect to the orientation of the grain boundary and masking layersLEE, H. C; VANHAELEMEERSCH, S.Thin solid films. 1998, Vol 320, Num 1, pp 147-150, issn 0040-6090Conference Paper

A novel process for fabricating conformal and stable TiN-based barrier filmsLU, J. P; HSU, W. Y; HONG, Q. Z et al.Journal of the Electrochemical Society. 1996, Vol 143, Num 12, pp L279-L280, issn 0013-4651Article

Experimental and numerical analysis of rapid reaction to initiate the radical chain reactions in WSix CVDCHAE, Y. K; EGASHIRA, Y; SHIMOGAKI, Y et al.Thin solid films. 1998, Vol 320, Num 1, pp 151-158, issn 0040-6090Conference Paper

MOCVD of TiN and/or Ti from new precursorsJAEGAB LEE; JIYONG KIM; HYUNKOOK SHIN et al.Thin solid films. 1998, Vol 320, Num 1, pp 15-19, issn 0040-6090Conference Paper

Structural change of TiN/Ti/SiO₂ multilayers by N₂ annealingHAMAMURA, H; ITOH, H; SHIMOGAKI, Y et al.Thin solid films. 1998, Vol 320, Num 1, pp 31-34, issn 0040-6090Conference Paper

Temperature dependence of the Al-fill processes for submicron-via structuresWEBER, S. J; IGGULDEN, R. C; SCHNABEL, R. F et al.Thin solid films. 1998, Vol 320, Num 1, pp 63-66, issn 0040-6090Conference Paper

The carrier gas and surface passivation effects on selectivity in chemical vapor deposition of copper filmsSEOK KIM; PARK, J.-M; CHOI, D.-J et al.Thin solid films. 1998, Vol 320, Num 1, pp 95-102, issn 0040-6090Conference Paper

Growth and properties of W-Si-N diffusion barriers deposited by chemical vapor depositionFLEMING, J. G; ROHERTY-OSMUN, E; SMITH, P. M et al.Thin solid films. 1998, Vol 320, Num 1, pp 10-14, issn 0040-6090Conference Paper

Integrated Al-plug process for 0.45 μm contact/via at 420°CPARIKH, S.Thin solid films. 1998, Vol 320, Num 1, pp 58-62, issn 0040-6090Conference Paper

Integrated CVD-PVD Al plug processing for sub-half micron featuresKONECNI, A; DIXIT, G; RUSSELL, N. M et al.Thin solid films. 1998, Vol 320, Num 1, pp 52-57, issn 0040-6090Conference Paper

Process technology and integration challenges for high performance interconnectsSANDHU, G. S.Thin solid films. 1998, Vol 320, Num 1, pp 1-9, issn 0040-6090Conference Paper

Thermal stability of Al/barrier/TiSi_x multilayer structuresLU, J. P; HSU, W. Y; HONG, Q. Z et al.Thin solid films. 1998, Vol 320, Num 1, pp 20-25, issn 0040-6090Conference Paper

TiN barrier integrity and volcano formation in W-plug applicationsPARIKH, S; AKSELROD, L; GARDNER, J et al.Thin solid films. 1998, Vol 320, Num 1, pp 26-30, issn 0040-6090Conference Paper

Reactively sputtered titanium nitride films for submicron contact barrier metallizationDIXIT, G. A; WEI, C. C; LIOU, F. T et al.Applied physics letters. 1993, Vol 62, Num 4, pp 357-359, issn 0003-6951Article

Transmission electron microscopy characterization of defects resulting from th epolycrystalline silicon buffered local oxidation of silicon isolation processDIXIT, G. A; HODGES, R. L; STAMAN, J. W et al.Applied physics letters. 1992, Vol 60, Num 18, pp 2228-2230, issn 0003-6951Article